View mmdt3906 datasheet:

SMD Type TransistorsPNP TransistorsMMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 150 mW Thermal Resistance Junction to Ambient RJA 625 /W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -40 V Emitter - base breakdown voltage VEBO IE= -100A IC=0 -5 Collector

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