View mmdt3906 datasheet:

MMDT3906PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363 * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O.053(1.35.096(2.45) PCM : 0.2 W (Tamp.=25 C).045(1.15.085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.2 A.014(0.35).006(0.15)C B E.006(0.15)2 1 1 .003(0.08)Collector -base voltage .087(2.20).079(2.00).004(0.10).000(0.00)V(BR) CBO : - 40 V.043(1.10) .039(1.00).035(0.90) .035(0.90)Operating & storage junction temperatureE B C2 2 1O OTj, Tstg : -55 C ~ +150 CMarking : K3N or A2Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITVCollector-base breakdown volt

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