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View mmg400d060b6n datasheet:

mmg400d060b6nmmg400d060b6n

MMG400D060B6N 600V 400A IGBT Module July 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GD Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25C unless otherwise specified Symbol Parameter Test Conditions Values UnitIGBT VCES Collector - Emitter Voltage 600 V VGES Gate - Emitter Voltage 20 VTC=25C 460 AIC DC Collector Current TC=50C 400 ATC=25C, tp=1ms 920 AICpuls Pulsed Collector Current TC=50C, tp=1ms 800 APtot Power Dissipation Per IGBT 1400 W TJ Junction Temperature Range -40 to +150 C TSTG Storage Temperature Range -40 to +125 C Visol Insulation Test Voltage AC, t=1min 3000 V Free-Wheeling Diode VRRM

 

Keywords - ALL TRANSISTORS DATASHEET

 mmg400d060b6n.pdf Design, MOSFET, Power

 mmg400d060b6n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmg400d060b6n.pdf Database, Innovation, IC, Electricity

 

 
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