All Transistors. Datasheet

 

View mmg400d060uk6n datasheet:

mmg400d060uk6nmmg400d060uk6n

MMG400D060UK6N 600V 400A IGBT Module July 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GD Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specified CSymbol Parameter Test Conditions Values Unit IGBT V Collector - Emitter Voltage 600 V CESV Gate - Emitter Voltage 20 V GEST =25C 460 A CI DC Collector Current CT =50C 400 A CTC=25C, tp=1ms 920 A I Pulsed Collector Current CpulsT =50C, t =1ms 800 A C pP Power Dissipation Per IGBT 1400 W totT Junction Temperature Range -40 to +150 C JT Storage Temperature Range -40 to +125 C STGVisol Insulation Test Voltage AC, t=1min

 

Keywords - ALL TRANSISTORS DATASHEET

 mmg400d060uk6n.pdf Design, MOSFET, Power

 mmg400d060uk6n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmg400d060uk6n.pdf Database, Innovation, IC, Electricity

 

 
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