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View mmg400d120b6hn datasheet:

mmg400d120b6hnmmg400d120b6hn

MMG400D120B6HN1200V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses TJmax =175CAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specifiedCSymbol Parameter/Test Conditions Values UnitVCES Collector Emitter Voltage TJ=25 1200VVGES Gate Emitter Voltage 20TC=25 600IC DC Collector CurrentTC=90 400 AICM Repetitive Peak Collector Current tp=1ms 800Ptot Power Dissipation Per IGBT 2100 W

 

Keywords - ALL TRANSISTORS DATASHEET

 mmg400d120b6hn.pdf Design, MOSFET, Power

 mmg400d120b6hn.pdf RoHS Compliant, Service, Triacs, Semiconductor

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