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View mmg400d170b6en datasheet:

mmg400d170b6enmmg400d170b6en

MMG400D170B6EN1700V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specifiedCSymbol Parameter/Test Conditions Values UnitVCES Collector Emitter Voltage TJ=25 1700VVGES Gate Emitter Voltage 20TC=25 600IC DC Collector CurrentTC=90 400 AICM Repetitive Peak Collector Current tp=1ms 800Ptot Power Dissipation Per IGBT 2700 WDiode-inverterABSOLUTE MAXIMUM RATINGS T =25C unle

 

Keywords - ALL TRANSISTORS DATASHEET

 mmg400d170b6en.pdf Design, MOSFET, Power

 mmg400d170b6en.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmg400d170b6en.pdf Database, Innovation, IC, Electricity

 

 
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