View mmix4b20n300 datasheet:

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C, RGE = 1M 3000 VG3VGES Continuous 20 V Isolated TabE3E4VGEM Transient 30 VG4E2C4IC25 TC = 25C 34 AG2IC110 TC = 110C 14 AC2G3ICM TC = 25C, VGE = 19V, 1ms 150 AE1C310ms 74 AG1SSOA VGE = 15V, TVJ = 125C, RG = 20 ICM = 130 AC1(RBSOA) Clamped Inductive Load 1500 VG = Gate E = EmitterPC TC = 25C 150 WC = CollectorTJ -55 ... +150 CTJM C150Tstg -55 ... +150 CFeaturesTL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD

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