View mps8550 datasheet:

SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.00 + 0.50K 0.55 MAXF FVEBOEmitter-Base Voltage -6 V L 2.30M 0.45 MAXICCollector Current -1.5 A N 1.001 2 36251. EMITTERPC*Collector Power Dissipation mW2. BASE4003. COLLECTORTjJunction Temperature 150Tstg -55150 Storage Temperature RangeTO-92*Cu Lead-Frame : 625mWFe Lead-Frame : 400mWELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNITICBO VCB=-35V, IE=0Collector Cut-off Current - - -100 nAIE

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