View mps8550sc datasheet:

SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunction Temperature 150Tstg -55150 Storage Temperature Range* PC : Package Mounted On 99.5% Alumina (1080.6)ELECTRICAL CHARACTERISTICS (Ta=25)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNITV(BR)CBO IC=-0.1mA, IE=0Collector-Base Breakdown Voltage -40 - - VV(BR)CEO IC=-1mA, IB=0Collector-Emitter Breakdown Voltage -25 - - VV(BR)EBO IE=-0.1mA, IC=0Emitter-Base Breakdown Voltage -5 - - VICBO VCB=-35V, IE=0Collector Cut-off Current - - -0.1 uAIEBO VE

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 mps8550sc.pdf Design, MOSFET, Power

 mps8550sc.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mps8550sc.pdf Database, Innovation, IC, Electricity