View mrf18085a datasheet:

Document Number: MRF18085AFreescale SemiconductorRev. 8, 10/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF18085ALSR3Designed for GSM and GSM EDGE base station applications withfrequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA andmulticarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.1805 -1880 MHz, 85 W, 26 V GSM and GSM EDGE Performance @ 1880 MHzPower Gain - 15 dB (Typ) @ 85 Watts CWGSM/GSM EDGEEfficiency - 52% (Typ) @ 85 Watts CWLATERAL N-CHANNEL Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW RF POWER MOSFETOutput PowerFeatures Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness

Keywords - ALL TRANSISTORS DATASHEET

 mrf18085a.pdf Design, MOSFET, Power

 mrf18085a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mrf18085a.pdf Database, Innovation, IC, Electricity