View mrf182 mrf182s datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF182/DThe RF MOSFET LineRF PowerMRF182Field Effect TransistorsMRF182SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device30 W, 1.0 GHz Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode InductancesRF POWER MOSFETsDCASE 360B01, STYLE 1G(MRF182)SCASE 360C03, STYLE 1(MRF182S)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 65 VdcGateSource Voltage VGS 20 VdcTotal Device Dissipation @ TC = 70C PD 74 WDerate above 70C 0.57 W/CStorage Temperature Range Tstg 65 to +150 COperating Junction Temperature TJ 200 CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case RJC 1.75 C/W

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