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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET LineRF PowerMRF183Field Effect TransistorsMRF183SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND RF Mode InductancesPOWER MOSFETDCASE 360B01, STYLE 1GSCASE 360C02, STYLE 1MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 65 VdcGateSource Voltage VGS 20 VdcStorage Temperature Range Tstg 65 to +150 COperating Junction Temperature TJ 200 CTotal Device Dissipation @ TC = 25C PD 140 WDerate above 25C 0.80 W/CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case RJC 1.25 C/WELE

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