View mrf185rev1 datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/DAdvance InformationMRF185The RF MOSFET LineRF POWERField-Effect Transistor85 WATTS, 1.0 GHz28 VOLTSNChannel EnhancementMode Lateral MOSFETLATERAL NCHANNELBROADBAND High Gain, Rugged DeviceRF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Isolators, Reducing CommonMode InductancesDGS(FLANGE)GDCASE 375B02, STYLE 2MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 65 VdcGateSource Voltage VGS 20 VdcStorage Temperature Range Tstg 65 to +150 COperating Junction Temperature TJ 200 CTotal Device Dissipation @ TC = 25C PD 250 WattsDerate above 25C 1.45 W/CTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case RJC 0.7 C/WELEC

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