View ndf02n60z ndp02n60z ndd02n60z datasheet:

NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2)Rating Symbol NDF NDP NDD UnitDrain-to-Source Voltage VDSS 600 VContinuous Drain Current ID 2.4 2.2 ARqJC (Note 1)G (1)Continuous Drain Current ID 1.6 1.4 ARqJC TA = 100C (Note 1)Pulsed Drain Current, VGS IDM 10 9 AS (3)@ 10 VPower Dissipation RqJC PD 24 72 57 WGate-to-Source Voltage VGS 30 VSingle Pulse Avalanche EAS 120 mJEnergy, ID = 2.4 AESD (HBM) Vesd 2500 V(JESD 22-A114)RMS Isolation Voltage VISO 4500 V(t = 0.3 sec., R.H. 30%,TA = 25C) (Figure

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