View ndf10n60z datasheet:

NDF10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS650 V0.75 WCompliantABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol NDF UnitD (2)Drain-to-Source Voltage VDSS 600 VContinuous Drain Current, RqJC (Note 1) ID 10 AContinuous Drain Current ID 6.0 ATA = 100C, RqJC (Note 1)G (1)Pulsed Drain Current, IDM 40 AtP = 10 msPower Dissipation, RqJC PD 39 WS (3)Gate-to-Source Voltage VGS 30 VSingle Pulse Avalanche Energy EAS 300 mJ(L = 6.0 mH, ID = 10 A)ESD (HBM) (JESD22-A114) Vesd 3900 VRMS Isolation Voltage VISO 4500 V(t = 0.3 sec., R.H. 30%,TA = 25C) (Figure 13)

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