View ngb8207ab datasheet:

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 365 VOLTSFeaturesVCE(on) = 1.75 V Ideal for Coil-on-Plug and Driver-on-Coil ApplicationsTyp @ IC = 10 A, VGE . 4.5 V Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp LimitsCStress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic orG RGMicroprocessor Devices Low Saturation VoltageRGE High Pulsed Current Capability Minimum Avalanche Energy - 50

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