View njw0281g datasheet:

SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorNJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 1.5 ABCollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgSPTECH websitewww.superic-tech.com1SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorNJW0281GELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAM

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