View njw0281g datasheet:

isc Silicon NPN Power Transistor NJW0281GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0302GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 250 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 1.5 ABCollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgisc websitewww.iscsemi.com 1 isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor NJW0281GELECTRICAL CHARACTERISTICST =2

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