View ntmfs6h800n datasheet:

NTMFS6H800NMOSFET Power, Single,N-Channel80 V, 2.1 mW, 203 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant80 V 2.1 mW @ 10 V 203 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitD (5)Drain-to-Source Voltage VDSS 80 VGate-to-Source Voltage VGS 20 VContinuous Drain TC = 25C ID 203 ACurrent RqJC G (4)TC = 100C 143(Notes 1, 3)SteadyStatePower Dissipation TC = 25C PD 200 WRqJC (Note 1)S (1,2,3)TC = 100C 100N-CHANNEL MOSFETContinuous Drain TA = 25C ID 28 ACurrent RqJA TA = 100C 20(Notes 1, 2, 3)SteadyMARKINGStatePower Dissipation TA = 25C PD 3.8 WDIAGRAMRqJA (Notes 1 & 2)

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