View ntmfs6h801nl datasheet:

MOSFET - Power, SingleN-Channel80 V, 2.7 mW, 160 ANTMFS6H801NLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.7 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 160 A3.3 mW @ 4.5 VParameter Symbol Value UnitDrain-to-Source Voltage VDSS 80 VGate-to-Source Voltage VGS 20 VD (5,6)Continuous Drain TC = 25C ID 160 ACurrent RqJC TC = 100C 113(Notes 1, 3)SteadyStatePower Dissipation TC = 25C PD 167 WG (4)RqJC (Note 1)TC = 100C 83Continuous Drain TA = 25C ID 24 AS (1,2,3)Current RqJA TA = 100C 17(Notes 1, 2, 3)Steady N-CHANNEL MOSFETStatePower Dissipation TA = 25C PD 3.8 WRqJA (Notes 1, 2)TA

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