View om6526sa datasheet:

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Levels Ceramic Feedthroughs AvailableDESCRIPTIONThis IGBT power transistor features the high switching speeds of a power MOSFETand the low on-resistance of a bipolar transistor. It is ideally suited for high powerswitching applications such as frequency converters for 3 motors, UPS and highpower SMPS.MAXIMUM RATINGS @ 25C Unless Specified OtherwiseqPART IC (Cont.) V(BR)CES VCE (sat) (Typ.) Tf (Typ.) qJC PD TJNUMBER @ 90C, A V V ns C/W W C3.1OM6517SA 20 1000 4.0

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