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View p1402cdg datasheet:

p1402cdgp1402cdg

P1402CDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C50TC = 70 C40Continuous Drain Current (TJ = 175 C) IDTA = 25 C21.8b, cATA = 70 C18b, cIDMPulsed Drain Current 200IASAvalanche Current Pulse 39L = 0.1 mHEASSingle Pulse Avalanche Energy 94.8 mJTC = 25 C50a, eISContinuous Source-Drain Diode Current ATA = 25 C3.13b, cTC = 25 C

 

Keywords - ALL TRANSISTORS DATASHEET

 p1402cdg.pdf Design, MOSFET, Power

 p1402cdg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 p1402cdg.pdf Database, Innovation, IC, Electricity

 

 
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