View p1403ev8 datasheet:

P1403EV8P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = -10V -30V - 12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-12IDContinuous Drain Current2TA = 70 C-10AIDM-65Pulsed Drain Current1 , 2IASAvalanche Current -39EASAvalanche Energy L = 0.1mH 89 mJTA = 25 C3PDPower Dissipation WTA = 70 C2TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 25C / WJunction-to-Ambient RqJA 401Pulse width limited by maximum junction temperature.2Limited only by maximum temperature allowedVer 1.0 1 2012/4/13P1403EV8P-C

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