View p2n2907 a datasheet:

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907P2N2907ATO-92Plastic PackageECBDesigned for switching and linear applications, DC amplifier and driver for industrial applicationsABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise)DESCRIPTION SYMBOL P2N2907 P2N2907A UNITVCEO Collector Emitter Voltage 40 60 VVCBOCollector Base Voltage 60 60 VVEBOEmitter Base Voltage 5 VCollector Current ICM 600 mATotal Power Dissipation @ Ta=25C 625 mWPDDerate above 25C 5 mW/CTotal Power Dissipation @ TC=25C 1.5 WPDDerate above 25C 12 mW/COperating and Storage Junction Tj, Tstg - 55 to +150 CTemperature RangeTHERMAL RESISTANCERth (j-c)Junction to Case 83.3 C/WRth (j-a)Junction to Ambient 200 C/WELECTRICAL CHARACTERISTICS (Ta=

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