View p2n2907a datasheet:

P2N2907AAmplifier TransistorPNP SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector--Emitter Voltage VCEO --60 VdcCollector--Base Voltage VCBO --60 Vdc3Emitter--Base Voltage VEBO --5.0 VdcEMITTERCollector Current -- Continuous IC --600 mAdcTotal Device Dissipation @ TA =25C PD 625 mWDerate above 25C 5.0 mW/CTO--92Total Device Dissipation @ TC =25C PD 1.5 WCASE 29Derate above 25C 12 mW/CSTYLE 17Operating and Storage Junction TJ, Tstg --55 to CTemperature Range +1501122THERMAL CHARACTERISTICS 33STRAIGHT LEAD BENT LEADCharacteristic Symbol Max UnitBULK PACK TAPE & REELAMMO PACKThermal Resistance, Junction to Ambient RJA 200 C/WThermal Resistance, Junction to Case RJC 83.3 C/WMARKING DIAGRAMStresses exceeding Maxim

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