View pr804ba33 datasheet:

PR804BA33N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.4m @VGS = 10V30V 149AABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C149TC = 100 C94IDContinuous Drain Current4TA = 25 C37ATA= 70 C29IDM200Pulsed Drain Current1IASAvalanche Current 51EASAvalanche Energy L =0.1mH 130 mJTC = 25 C50TC = 100 C20PDWPower Dissipation3TA = 25 C3.1TA = 70 C2TJ, TstgOperating Junction & Storage Temperature Range -55 to 150 CREV 1.0 1 2018/5/4PR804BA33N-Channel Enhancement Mode MOSFETTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJAt 10s 40Junction-to-Ambient2Steady-State RqJA 60C / WJunct

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