All Transistors. Datasheet

 

View pz2n7002m datasheet:

pz2n7002mpz2n7002m

PZ2N7002MN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V60V 300mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C300IDContinuous Drain Current mATC = 100 C190IDM1 APulsed Drain Current1TC = 25 C0.35PDPower Dissipation WTC = 100 C0.14TJ, TSTGOperating Junction & Storage Temperature Range -40 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 350 C / W1Pulse width limited by maximum junction temperature.REV 1.2 1 2015/5/6PZ2N7002MN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)LIMITSPARAMETER SYMBOL TEST CONDITIONS

 

Keywords - ALL TRANSISTORS DATASHEET

 pz2n7002m.pdf Design, MOSFET, Power

 pz2n7002m.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pz2n7002m.pdf Database, Innovation, IC, Electricity

 

 
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