View r07ds0494ej rjk5026dpe datasheet:

Preliminary Datasheet RJK5026DPE R07DS0494EJ0200(Previous: REJ03G1852-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 21, 2011Features Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4. Drain123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 6 ADrain peak current ID (pulse)Note1 18 ABody-drain diode reverse drain current IDR 6 ABody-drain diode reverse drain peak current IDR (pulse)Note1 18 AAvalanche current IAPNote3 4 AAvalanche energy EARNote3 0.88 mJChannel dissipation Pch Note2 62.5 WChannel to case t

Keywords - ALL TRANSISTORS DATASHEET

 r07ds0494ej rjk5026dpe.pdf Design, MOSFET, Power

 r07ds0494ej rjk5026dpe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0494ej rjk5026dpe.pdf Database, Innovation, IC, Electricity