View r6006jnd3 datasheet:

R6006JND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embossed Tape Packing code TL1 Marking R6006JND3 Quantity (pcs) 2500lAbsolute maximum ratings (Ta = 25C ,unless otherwise specified)lParameter Symbol Value UnitVDSSDrain - Source voltage 600 VContinuous drain current (Tc = 25C) ID*16 AIDP*2Pulsed drain current 18 AVGSSGate - Source voltage 30 VIAS*3Avalanche current, single pulse 1.50 AEAS*3Avalanche energy, single pulse 117 mJPower dissipation (Tc = 25

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 r6006jnd3.pdf Design, MOSFET, Power

 r6006jnd3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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