View r6006jnx datasheet:

isc N-Channel MOSFET Transistor R6006JNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 6 ADI Drain Current-Single Pluse 18 ADMP Total Dissipation @T =25 43 WD CT Max. Operating Junction Temperature -55~150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 2.87th j-c1isc website

Keywords - ALL TRANSISTORS DATASHEET

 r6006jnx.pdf Design, MOSFET, Power

 r6006jnx.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r6006jnx.pdf Database, Innovation, IC, Electricity