View r6007jnj datasheet:

R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embossed Tape Packing code TL Marking R6007JNJ Basic ordering unit (pcs) 1000lAbsolute maximum ratings (Ta = 25C ,unless otherwise specified)lParameter Symbol Value UnitVDSSDrain - Source voltage 600 VContinuous drain current (Tc = 25C) ID*17 AIDP*2Pulsed drain current 21 AVGSSGate - Source voltage 30 VIAS*3Avalanche current, single pulse 1.6 AEAS*3Avalanche energy, single pulse 132 mJPower dissipation (

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 r6007jnj.pdf Design, MOSFET, Power

 r6007jnj.pdf RoHS Compliant, Service, Triacs, Semiconductor

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