View rej03g1360 rjk5015dpkds datasheet:

Preliminary Datasheet RJK5015DPK REJ03G1360-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 25 ADrain peak current ID (pulse)Note1 75 ABody-drain diode reverse drain current IDR 25 ABody-drain diode reverse drain peak current IDR (pulse)Note1 75 AAvalanche current IAPNote3 7 AAvalanche energy EARNote3 2.7 mJChannel dissipation Pch Note2 150 WChannel to case thermal impedance ch-c 0.833 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to

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