View rej03g1487 rjk5012dpeds datasheet:

Preliminary Datasheet RJK5012DPE REJ03G1487-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 12, 2010Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4. Drain123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 12 ADrain peak current ID (pulse)Note1 24 ABody-drain diode reverse drain current IDR 12 ABody-drain diode reverse drain peak current IDR (pulse)Note1 24 AAvalanche current IAPNote3 4 AAvalanche energy EARNote3 0.88 mJChannel dissipation Pch Note2 100 WChannel to case thermal impedance ch-c 1

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