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View ruh40190m datasheet:

ruh40190mruh40190m

RUH40190MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A,DDRDS (ON) =1.7m(Typ.)@VGS=10VDD Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt CapabilityGS Low Gate Charge Minimize Switching LossSS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications DC/DC Converters On board power for serversG Fast chargesSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (TC=25C Unless Otherwise Noted)VDSS Drain-Source Voltage 40VVGSS Gate-Source Voltage 20TJ Maximum Junction Temperature 175 CTSTG Storage Temperature Range -55 to 175 CIS Diode Continuous Forward Current TC=25C 190 AMounted on Large Heat SinkTC=25C 560 AIDP 300s Pulse Drain Current T

 

Keywords - ALL TRANSISTORS DATASHEET

 ruh40190m.pdf Design, MOSFET, Power

 ruh40190m.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ruh40190m.pdf Database, Innovation, IC, Electricity

 

 
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