All Transistors. Datasheet

 

View s8550 datasheet:

s8550s8550

S8 550S901 2SOT-23 TRANSISTOR(PNP)FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 VIC = -100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO -5 VIE= -100A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1A Collecto

 

Keywords - ALL TRANSISTORS DATASHEET

 s8550.pdf Design, MOSFET, Power

 s8550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8550.pdf Database, Innovation, IC, Electricity

 

 
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