View s8550 to-92 datasheet:

S8550(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units -40 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)PC Collector Dissipation 625 mW TJ Junction Temperature 150 Tstg Junction and Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 VCollector cut-off current ICBO VCB= -40V, IE=0 -0.1 uACo

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