View s8550g datasheet:

S8550GPlastic-Encapsulate TransistorsSimplified outlineS8550G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PCM : 0.625 WTamb=25 Collector current 2. COLLECTOR ICM : -0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : -40 V Operating and storage junction temperature range TJTstg: -55 to +150 Electrical CharacteristicsTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) Ic= -100A , I =0 -40 V CBO EIc= -0.1 mA I =0 -25 Collector-emitter breakdown voltage V(BR) B V CEOEmitter-base breakdown voltage V(BR) I = -100A I =0 -5 V EBO E CCollector cut-off current I V = -40 V , I =0 -0.1 A CBO CB ECollector cut-off current I V = -20 V , I =0 -0.1 A CEO CE BV = - 3 V I =0 Emitter cut-off current

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