View s9018 datasheet:
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS9018MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 20 VdcCollector-Base VoltageVCBO 30 VdcEmitter-Base VoltageVEBO Vdc5.0Collector Current-ContinuousIc 50 mAdc-THERMAL CHARACTERISTICS Characteristic Symbol MaxUnit PDTotal Device Dissipation 225 mWFR-5 Board(1)TA=25 251.8 mW/Derate above25 25PDTotal Device Dissipation 300 mWAlumina Substrate ,(2)TA=252.4Derate above25 25 mW/Thermal Resistance Junction
Keywords - ALL TRANSISTORS DATASHEET
s9018.pdf Design, MOSFET, Power
s9018.pdf RoHS Compliant, Service, Triacs, Semiconductor
s9018.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet