View s9018 datasheet:

S9018Silicon Epitaxial Planar TransistorFEATURES High current gain bandwidth product. power dissipation.(PC=200mW) SOT-23 APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION Type No. Marking Package Code S9018 J8 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 25 VCollector-Emitter Voltage VCEO 18 VEmitter-Base Voltage VEBO 4 VCollector Current -Continuous IC 50 mACollector Dissipation PC 200 mWJunction and Storage Temperature Tj,Tstg -55~150 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter Symbol Test conditions MINTYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100A,IE=0 25 VCollector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 VEmitter-base breakdown voltage V(BR)EBO IE=-100A,IC=

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