View s9018 datasheet:
S9018NPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollector Dim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation11C 0.890 1.1102 BasePCM : 0.2 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : 0.05 A AEmitterH 0.013 0.100LCollector-base voltageJ 0.085 0.1773V(BR)CBO : 25 VK 0.450 0.600STop ViewBOperating & storage junction temperature 12L 0.890 1.020O OTj, Tstg : - 55 C ~ + 150 C S 2.100 2.500V GV 0.450 0.600All Dimension in mmCHJDK ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 25 VIc= 100A, I =0 ECollector-emitter breakdown voltage V Ic= 0.1mA, I =0 18
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s9018.pdf Design, MOSFET, Power
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