All Transistors. Datasheet

 

View s9018 to-92 datasheet:

s9018_to-92s9018_to-92

S9018(NPN)TO-92 Bipolar Transistors 1. TO-92EMITTER 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 25 VCollector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 VEmitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 VCollector cut-off current ICBO VCB= 20

 

Keywords - ALL TRANSISTORS DATASHEET

 s9018 to-92.pdf Design, MOSFET, Power

 s9018 to-92.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s9018 to-92.pdf Database, Innovation, IC, Electricity

 

 
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