View s9018lt1 datasheet:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25) 2. 4 Collector current 1. 3 ICM: 0.05 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 25 V(BR)CBO Ic= 100A, I =0 ECollector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V(BR)CEO BEmitter-base breakdown voltage V 4 V(BR)EBO I =100A, I =0 E CCollector cut-off current ICBO VCB=20V, IE=0 0.1A Collector cut-off current I V =15V, I =0 0.1CEO CE B A Emitter cut-off current I V

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