View sgh20n60rufd datasheet:

September 2000 IGBTSGH20N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 20Athe applications such as motor control, UPS and general High Input Impedanceinverters where short-circuit ruggedness is required. CO-PAK, IGBT with FRD : trr = 50ns (typ.)ApplicationAC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls CCGGETO-3P EG C EAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Description SGH20N60RUFD UnitsVCES Collector-Emitter Voltage 600 VVGES Gate-Emitter Voltage 20 VCollector C

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