View sihf18n50c datasheet:

SiHP18N50C, SiHF18N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 100 % Avalanche TestedRDS(on) ()VGS = 10 V 0.225 High Peak Current CapabilityQg (Max.) (nC) 76 dV/dt RuggednessQgs (nC) 21Qgd (nC) 29 Improved trr/QrrConfiguration Single Improved Gate ChargeD High Power Dissipations Capability Compliant to RoHS Directive 2002/95/ECTO-220 TO-220 FULLPAKGSDSD SGGN-Channel MOSFET ORDERING INFORMATIONPackage TO-220 TO-220 FULLPAKLead (Pb)-free SiHP18N50C-E3 SiHF18N50C-E3ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 500V Gate-Source Voltage VGS 30TC = 25 C 18Continuous Drain Current (TJ = 150 C)a VGS at 10 V IDTC = 100 C 11 APulsed Drain Currentb IDM 72

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