View sihf18n50d datasheet:

SiHF18N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.28- Low Input Capacitance (Ciss)Qg (max.) (nC) 76- Reduced Capacitive Switching LossesQgs (nC) 11- High Body Diode RuggednessQgd (nC) 17- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low Cost- Simple Gate Drive Circuitry- Low Figure-of-Merit (FOM): Ron x QgD- Fast SwitchingTO-220 FULLPAK Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912 Note* Lead (Pb)-containing terminations are not RoHS-compliant.GExemptions may apply.APPLICATIONS Consumer ElectronicsS- Displays (LCD or Plasma TV)SD N-Channel MOSFET G Server and Telecom Power

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