View spp100n06s2-05 spb100n06s2-05 datasheet:

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2 Q67060-S6049 PN0605Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitAContinuous drain current 1) ID TC=25C 100100400Pulsed drain current ID pulsTC=25C810 mJAvalanche energy, single pulse EASID=80A, VDD=25V, RGS=25EAR 30Repetitive avalanche energy, limited by Tjmax2)Reverse diode dv/dt dv/dt 6 kV/sIS=100A, VDS=44V, di/dt=200A/s, Tjmax=175CGate source voltage VGS V20Power dissipation Ptot 300 WTC=25CC

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