View spp100n08s2-07 spb100n08s2-07 datasheet:

SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2 Q67060-S6046 PN0807Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitAContinuous drain current 1) ID TC=25C 100100400Pulsed drain current ID pulsTC=25C810 mJAvalanche energy, single pulse EASID=80 , VDD=25V, RGS=25EAR 30Repetitive avalanche energy, limited by Tjmax2)Reverse diode dv/dt dv/dt 6 kV/sIS=100A, VDS=60V, di/dt=200A/s, Tjmax=175CGate source voltage VGS V20Power dissipation Ptot 300 WTC=25CC

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