View ss8550-l ss8550-h ss8550-j datasheet:

SS8550TRANSISTOR(PNP)SOT23 FEATURES High Collector Current Complementary to SS8050 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOV Collector-Emitter Voltage -25 V CEOV Emitter-Base Voltage -5 V EBOIC Collector Current -1.5 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417 /W JAT Junction Temperature 150 jT Storage Temperature -55+150 stgELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -40 V (BR)CBO C ECollector-emitter breakdown voltage V I =-0.1mA, I =0 -25 V (BR)CEO C BEmitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector

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