View ss8550-ms datasheet:

www.msksemi.comSS8550-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Collector Current Complementary to SS8050-MS1. BASE2. EMITTERSOT23 MARKING Y2 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBOVCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V I Collector Current -1.5 A CP Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417 /W JAOperation Junction andTJ,Tstg -55+150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V Collector-emitter breakdown voltage V I =-0.1mA, I =0 -25 V (BR)CEO C B

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