View ss8550 datasheet:

SS8550Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 High Collector Current Complementary to SS8050Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER -25 V V Collector-Emitter Voltage CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOI Collector Current -1.5 A CMARKING: Y2P Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction To Ambient 417 /W T Junction Temperature 150 jT Storage Temperature -55+150 stgElectrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -40 V (BR)CBO C ECollector-emitter break

Keywords - ALL TRANSISTORS DATASHEET

 ss8550.pdf Design, MOSFET, Power

 ss8550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8550.pdf Database, Innovation, IC, Electricity